You are here »Home»Products »Electrical Equipment & Supplies»Other Electrical Equipment»CGHV96100F2 - 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier – Cree/Wo
Product details
CGHV96100F2 - 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier – Cree/Wo
Visits: 132
Price: $ 750.00 Piece(s) / each
(0 means negotiable)
Freight fee: Seller affords freight fee
Brand:
Specifications: Semiconductors, Discrete Semiconductors, Transistors, RF Tra
Type New
Date: 01-08-2018
Business type: Manufacturing
Seller details: See Right Sidebar section
Quantity: Piece(s)( Stock 0 Piece(s))

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Product details

 Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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    Seller information
    Super Emission Technology
    Name alexkosh
    Telephone: +8615925977440
    Fax:
    Mobile:
    Location: Zhejiang yiwu
    Address: Room No.201,Unit5,building No. 5, Honghua industrial Area,Houzhai Town
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